N TYPE GE NO FURTHER A MYSTERY

≤ 0.fifteen) is epitaxially grown over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the composition is cycled as a result of oxidizing and annealing levels. A result of the preferential oxidation of Si around Ge [sixty eight], the first Si1–Publisher's Take note: Springer Nature continues to be neutral regard